Product Summary

The MRF150 is a RF power field-effect transistor. It is designed primarily for linear large-signal output stages up to 150 MHz frequency range.

Parametrics

MRF150 absolute maximum ratings: (1)Drain–Source Voltage:125 Vdc; (2)Drain–Gate Voltage:125 Vdc; (3)Gate–Source Voltage:±40 Vdc; (4)Drain Current:Continuous:16 Adc; (5)Total Device Dissipation:@ TC = 25℃:300W, Derate above 25℃:1.71W/℃; (6)Storage Temperature Range:–65℃ to +150℃; (7)Operating Junction Temperature:200℃.

Features

MRF150 features: (1)Specified 50 Volts, 30 MHz Characteristics: Output Power = 150 Watts, Power Gain = 17 dB (Typ), Efficiency = 45% (Typ); (2)Superior High Order IMD; (3)IMD(d3) (150 W PEP):–32 dB (Typ); (4)IMD(d11) (150 W PEP):–60 dB (Typ); (5)100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR.

Diagrams

MRF150 test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF150
MRF150

M/A-COM Technology Solutions

Transistors RF MOSFET Power 5-150MHz 150Watts 50Volt Gain 17dB

Data Sheet

0-1: $39.75
1-10: $35.78
10-25: $25.44
25-50: $24.65
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